发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device includes a cell block composed of several series-connected units having a ferroelectric capacitor and a cell transistor parallel-connected to the ferroelectric capacitor and a select transistor connected to an end of the cell block. Mutually separated first impurity diffusion layers are formed on the surface of the semiconductor substrate along a first direction, and have a first area. A second impurity diffusion layer is formed on the surface of the semiconductor substrate separated from the end first impurity diffusion layer, and has a second area. A first gate electrode is provided on the semiconductor substrate between the first impurity diffusion layers along a second direction. A second gate electrode is provided on the semiconductor substrate between the end first impurity diffusion layer and the second impurity diffusion layer along a second direction. A contact electrically connects a bit line and the second impurity diffusion layer.
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申请公布号 |
US7138674(B2) |
申请公布日期 |
2006.11.21 |
申请号 |
US20030624483 |
申请日期 |
2003.07.23 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIGA HIDEHIRO;SHIRATAKE SHINICHIRO;TAKASHIMA DAISABURO |
分类号 |
G11C11/22;G11C11/14;H01L21/8246;H01L27/105;H01L27/108;H01L27/115 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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