Method of manufacturing semiconductor device including etching a conductive layer by using a gas including SiCl4 and NF3,申请号US20030678994-传众专利搜索

发明名称	Method of manufacturing semiconductor device including etching a conductive layer by using a gas including SiCl4 and NF3
摘要	A method of manufacturing a semiconductor device comprising forming an insulating layer above a semiconductor layer, forming a conductive layer including at least tantalum and tantalum nitride, and etching the conductive layer with using a gas including SiCl<SUB>4 </SUB>and NF<SUB>3</SUB>.
申请公布号	US7138339(B2)	申请公布日期	2006.11.21
申请号	US20030678994	申请日期	2003.10.03
申请人	SEIKO EPSON CORPORATION	发明人	SHIMADA HIROYUKI
分类号	H01L21/28;H01L21/302;H01L21/3065;H01L21/3213;H01L21/336;H01L21/8238;H01L21/84;H01L27/08;H01L27/092;H01L29/423;H01L29/49;H01L29/78;H01L29/786	主分类号	H01L21/28
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