发明名称 |
Interconnect, interconnect forming method, thin film transistor, and display device |
摘要 |
An interconnect forming method according to the present invention includes a step of forming a barrier film for metal diffusion on an insulator film, a step of selectively forming a metal seed layer on the barrier film for metal diffusion using an electroless plating process, a step of selectively forming a metal conductive layer on the metal seed layer using an electroplating process, and a step of etching the barrier film for metal diffusion using the metal conductive layer as a mask.
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申请公布号 |
US7138715(B2) |
申请公布日期 |
2006.11.21 |
申请号 |
US20040974722 |
申请日期 |
2004.10.28 |
申请人 |
ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO.,LTD. |
发明人 |
KADO MASAKI;AOMORI SHIGERU;YAMAMOTO YOSHITAKA |
分类号 |
G02F1/136;H01L23/48;H01L21/336;H01L21/48;H01L23/498;H01L27/12;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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