发明名称 |
Method and apparatus for an improved deposition shield in a plasma processing system |
摘要 |
The present invention presents an improved deposition shield for surrounding a process space in a plasma processing system, wherein the design and fabrication of the deposition shield advantageously provides for a clean processing plasma in the process space with substantially minimal erosion of the deposition shield.
|
申请公布号 |
US7137353(B2) |
申请公布日期 |
2006.11.21 |
申请号 |
US20020259353 |
申请日期 |
2002.09.30 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SAIGUSA HIDEHITO;TAKASE TAIRA;MITSUHASHI KOUJI;NAKAYAMA HIROYUKI |
分类号 |
C23C16/00;H01J37/32;H01L21/205;H01L21/306;H01L21/3065;H05H1/00 |
主分类号 |
C23C16/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|