| 发明名称 |
Dual-channel CMOS transistors with differentially strained channels |
| 摘要 |
A semiconductor structure having a substrate with a surface layer including strained silicon. The surface layer has a first region with a first thickness less than a second thickness of a second region. A gate dielectric layer is disposed over a portion of at least the first surface layer region.
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| 申请公布号 |
US7138649(B2) |
申请公布日期 |
2006.11.21 |
| 申请号 |
US20020164665 |
申请日期 |
2002.06.07 |
| 申请人 |
AMBERWAVE SYSTEMS CORPORATION |
发明人 |
CURRIE MATTHEW T.;LOCHTEFELD ANTHONY J.;FITZGERALD EUGENE A. |
| 分类号 |
H01L29/06;H01L21/8234;H01L21/8238;H01L27/092;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109 |
主分类号 |
H01L29/06 |
| 代理机构 |
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代理人 |
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