Light-emitting semiconductor device using group III nitrogen compound

摘要

A light-emitting semiconductor device ( 10 ) consecutively includes a sapphire substrate ( 1 ), an AlN buffer layer ( 2 ), a silicon (Si) doped GaN n⁺-layer ( 3 ) of high carrier (n-type) concentration, a Si-doped (Al_x3Ga_1-x3)_y3In_1-y3N n⁺-layer ( 4 ) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al_x2Ga_1-x2)_y2In_1-y2N emission layer ( 5 ), and a Mg-doped (Al_x1Ga_1-x1)_y1In_1-y1N p-layer ( 6 ). The AlN layer ( 2 ) has a 500 Å thickness. The GaN n⁺-layer ( 3 ) has about a 2.0 mum thickness and a 2x10¹⁸/cm³ electron concentration. The n⁺-layer ( 4 ) has about a 2.0 mum thickness and a 2x10¹⁸/cm³ electron concentration. The emission layer ( 5 ) has about a 0.5 mum thickness. The p-layer 6 has about a 1.0 mum thickness and a 2x10¹⁷/cm³ hole concentration. Nickel electrodes ( 7, 8 ) are connected to the p-layer ( 6 ) and n⁺-layer ( 4 ), respectively. A groove ( 9 ) electrically insulates the electrodes ( 7, 8 ). The composition ratio of Al, Ga, and In in each of the layers ( 4, 5, 6 ) is selected to meet the lattice constant of GaN in the n⁺-layer ( 3 ). The LED ( 10 ) is designed to improve luminous intensity and to obtain purer blue color.