| 摘要 |
<p>A flash memory device having a recessed floating gate and a method for manufacturing the same are provided to increase the effective gate length and to reduce doping concentration by using a recess pattern. An isolation layer(27) which has the higher height than that of an active region(21a) is formed in a substrate(21). A recess pattern(29a) is formed in a floating gate forming region of the active region. A tunnel oxide layer is formed on the recess pattern. A recessed floating gate(31a) is then filled in the recess pattern. A dielectric film and a control gate are sequentially stacked on the recessed floating gate.</p> |
