发明名称 METHOD OF THERMAL TREATMENT OF MONOCRYSTALS OF LANTHANUM-GALLIUM SILICATE
摘要 FIELD: electronic industry; methods of production of the crystals with the triclinic crystal system. ^ SUBSTANCE: the invention is pertaining to the method of production of the crystals with the triclinic crystal system. Substance of the invention: the monocrystals of lanthanum-gallium silicate grown in compliance with Czochralski method from the iridium crusible are subjected to the two-stage thermal treatment. The monocrystals are preliminary subjected to the vacuum annealing at the pressure of 1.10-2 -1.10-4Pa and the temperature of 600-1200°C within 0.5-10 hours, and then conduct their isothermal air aging at the temperature of 300-350°C within 0.5-48 hours. The invention allows reproducibly produce the discolored monocrystals of lanthanum-gallium silicate and also to speed up propagation of the surface-acoustic waves (SAW) by 1-1.5 m/s at the simultaneous decrease of dispersion of the waves propagation velocity by 20-30 ppm. ^ EFFECT: the invention ensures production of the discolored monocrystals of lanthanum-gallium silicate and allows to increase the speed of propagation of the surface-acoustic waves at simultaneous reduction of the waves propagation dispersion by 20-30 ppm.
申请公布号 RU2287621(C1) 申请公布日期 2006.11.20
申请号 RU20050110633 申请日期 2005.04.12
申请人 OTKRYTOE AKTSIONERNOE OBSHCHESTVO "FOMOS-MATERIALS" 发明人 ALENKOV VLADIMIR VLADIMIROVICH;BUZANOV OLEG ALEKSEEVICH;MEDVEDEV ANDREJ VALER'EVICH;SAKHAROV SERGEJ ALEKSANDROVICH
分类号 C30B33/02;C30B15/02;C30B29/34 主分类号 C30B33/02
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