METHOD FOR MANUFACTURING IMAGE SENSOR

摘要

A method for manufacturing an image sensor is provided to prevent the damage of a substrate at a lower part of photoresist by uniformly coating the photoresist between gate electrodes. A gate conductive layer and a hard mask are sequentially deposited on a substrate(30) defined with a pixel region and a logic region. A hard mask pattern(33a) is formed at the pixel region while removing the hard mask of the logic region. A photoresist pattern(40a) is formed on the gate conductive layer. Gate electrodes(32a) are formed at the pixel and the logic regions by etching the gate conductive layer using the hard mask pattern and the photoresist pattern as a mask. A photodiode is then formed at the pixel region by implanting dopants using the hard mask pattern as an implantation barrier.