| 摘要 |
A method for measuring impurities in an intermetal dielectric with SiOC film is provided to measure and analyze metal impurities among the SiOC film by dissolving the SiOC film and collecting impurities with pretreatment solution. A wafer with an intermetal dielectric including SiOC film is installed in a thin layer analyzer to measure impurities in the intermetal dielectric. The SiOC film is removed from the intermetal dielectric by using pretreatment solution, and metal impurities are collected from the surface of the wafer at the same time. The density of metal impurities among the film is measured by using a GF-AAS(graphite furnace-atomic absorption spectroscopy) device. The pretreatment solution contains HF of 5 to 10%, HCL of 2 to 5% and H2O2 of 10 to 15%. The pretreatment solution includes HF of 8%, HCL of 2% and H2O2 of 15%.
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