TRANSISTOR AND METHOD OF FABRICATING THE SAME

摘要

A transistor and its manufacturing method are provided to restrain the convergence of an electric field at a predetermined portion between a channel region and an LDD region by forming a rounding region at a predetermined portion of a single crystal silicon layer using a predetermined ion implantation. A single crystal silicon layer(110) is formed on a substrate(100). A gate oxide layer is formed on the single crystal silicon layer. A polysilicon layer is formed on the gate oxide layer. A spacer is formed at both sidewalls of the polysilicon layer. Source/drain regions are formed at both sides of the polysilicon layer in the substrate. A rounding region(111) is formed at a predetermined portion of the single crystal silicon layer by using a predetermined ion implantation.