SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor LED is provided to make a light emitting stack material formed on a substrate have a broader area without varying the size of a chip and reduce bad influence caused by a crystal defect by forming a three-dimensional substrate. A conductive substrate has an upper surface of a three-dimensional type. A light emitting stacked material(109) is formed on the conductive substrate, including an n-type nitride semiconductor layer(103), an active layer(105) and a p-type nitride semiconductor layer(107) which are sequentially stacked. A p-side electrode(110) is formed on the p-type semiconductor layer. An n-side electrode(120) is formed under the conductive substrate. The conductive substrate is a nitride semiconductor substrate or a SiC substrate, having a thickness of 50 micrometers.