发明名称 FUSE BOX OF SEMICONDUCTOR DEVICES AND METHOD FOR FORMING THE SAME
摘要 A fuse box of a semiconductor device and a method for forming the same are provided to easily achieve a fuse blowing process and to prevent degradation by forming a stacked barrier between fuses. A fuse box(200) of a semiconductor device includes a plurality of fuses(33) of line and space shape, and a stacked barrier formed between the fuses. The fuses are formed on a semiconductor substrate(31). The stacked barrier is provided with interlayer dielectrics(35,36) and a metal pattern(37). The interlayer dielectrics are only formed on the stacked barrier.
申请公布号 KR100649830(B1) 申请公布日期 2006.11.17
申请号 KR20050058189 申请日期 2005.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, JI HYUNG
分类号 H01L21/82 主分类号 H01L21/82
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