THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A thin film transistor and a method for manufacturing a thin film transistor substrate are provided to reduce the contact resistance between a gate insulating layer and a metal film for a gate electrode, by forming an amorphous silicon film between the gate electrode and the metal film and then performing thermal treatment. A polycrystalline semiconductor layer(151a) having a channel region, a source region, and a drain region is formed on an insulating substrate(110). A gate line having a gate electrode(124a) is formed above or below the polycrystalline semiconductor layer. A first gate insulating layer(140) is formed between the polycrystalline semiconductor layer and the gate line. A storage electrode line(137) is formed in the same layer as the gate line, and apart from the gate line. Each of the gate line and the storage electrode line includes an amorphous silicon film and a metal film.