| 摘要 |
A nonvolatile ferroelectric memory device is provided to improve reliability of a cell by improving data retention characteristics by forming a floating channel layer comprising an N type drain region, an N type channel region and an N type source region between a word line and a bottom word line. A plurality of memory cells(Q1~Qm) has a floating channel layer connected in series, and each switching operation of the memory cells is selectively controlled according to a voltage applied to a plurality of word lines and bit lines. A first switching device(P1) selectively connects a bit line and the memory cells according to the state of a first selection signal. A second switching device(P2) selectively connects a sensing line and the memory cells according to the state of a second selection signal. Each of the memory cells comprises an insulation layer formed on the upper part of the bottom word line; the floating channel layer comprising an N type channel region maintaining a floating state and an N type drain region and an N type source region connected to both ends of the channel region; a dielectric layer formed on the upper part of the channel region of the floating channel layer; and a word line formed on the upper part of the ferroelectric layer.
|
