| 摘要 |
A method for manufacturing a semiconductor device is provided to acquire uniform contact resistance characteristics by forming a contact hole using an HF cleaning process and an O3 oxidation process. An insulating layer(22) is formed on a silicon substrate(21) with a predetermined lower structure. A contact hole for exposing the silicon substrate is formed through the insulating layer. A native oxide layer is removed from a bottom of the contact hole by performing a first cleaning process on the resultant structure using a diluted HF. An oxide layer is then formed at the bottom of the contact hole by performing an oxidation process on the resultant structure using O3. The oxide layer is removed from the bottom of the contact hole by performing a second cleaning process on the resultant structure using the diluted HF.
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