| 摘要 |
A method for forming a cylinder type capacitor lower electrode of a semiconductor device is provided to prevent the attack against a contact pad due to a capacitor sacrificial insulating layer removing process using an improved etching solution. A capacitor sacrificial insulating layer is formed on a semiconductor substrate(400) with a contact pad(420). A contact hole for exposing the contact pad to the outside is formed on the resultant structure by etching selectively the capacitor sacrificial insulating layer. A capacitor lower electrode is formed on the entire surface of the resultant structure. The capacitor sacrificial insulating layer is selectively removed from the resultant structure by performing a wet etching process using a predetermined etching solution. The predetermined etching solution contains HF of 1.0 to 1.5%.
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