发明名称 MEMORY BLOCK ERASING IN A FLASH MEMORY DEVICE
摘要 <p>The erase and verify method performs an erase operation and an erase verify read operation. If the erase verify read operation fails because unerased memory cells have been found, a normal memory read operation is performed in order to determine which memory cells are still programmed. A selective erase operation is then performed on the memory cells such that only the rows that comprise unerased memory cells undergo additional erase operations.</p>
申请公布号 WO2006122245(A1) 申请公布日期 2006.11.16
申请号 WO2006US18246 申请日期 2006.05.10
申请人 MICRON TECHNOLOGY, INC.;ARITOME, SEIICHI 发明人 ARITOME, SEIICHI
分类号 G11C16/34 主分类号 G11C16/34
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