发明名称 |
MEMORY BLOCK ERASING IN A FLASH MEMORY DEVICE |
摘要 |
<p>The erase and verify method performs an erase operation and an erase verify read operation. If the erase verify read operation fails because unerased memory cells have been found, a normal memory read operation is performed in order to determine which memory cells are still programmed. A selective erase operation is then performed on the memory cells such that only the rows that comprise unerased memory cells undergo additional erase operations.</p> |
申请公布号 |
WO2006122245(A1) |
申请公布日期 |
2006.11.16 |
申请号 |
WO2006US18246 |
申请日期 |
2006.05.10 |
申请人 |
MICRON TECHNOLOGY, INC.;ARITOME, SEIICHI |
发明人 |
ARITOME, SEIICHI |
分类号 |
G11C16/34 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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