Halbleiterlaserdiode mit Strombegrenzungsschicht und Herstellungsverfahren derselben,申请号DE20036008770-传众专利搜索

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发明名称	Halbleiterlaserdiode mit Strombegrenzungsschicht und Herstellungsverfahren derselben
摘要
申请公布号	DE60308770(D1)	申请公布日期	2006.11.16
申请号	DE20036008770	申请日期	2003.06.27
申请人	SAMSUNG ELECTRO-MECHANICS CO. LTD.	发明人	KWAK, JOON-SEOP;SUNG, YOUN-JOON;HA, KYOUNG-HO
分类号	H01S5/223;H01S5/00;H01S5/20;H01S5/22;H01S5/30;H01S5/323	主分类号	H01S5/223
代理机构		代理人
主权项
地址

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