| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element having such a structure as the crystallinity of a nitride semiconductor to be grown is improved, and stripping and chipping of a substrate can be carried out very easily by employing a zinc oxide-based compound exhibiting good processability as the substrate, and to provide its fabrication process. <P>SOLUTION: When a nitride semiconductor element is formed by laying a nitride semiconductor layer on a substrate 1, the substrate 1 is composed of Mg<SB>x</SB>Zn<SB>1-x</SB>O (0<x≤0.5), a first nitride semiconductor layer 2 composed of In<SB>y</SB>Ga<SB>1-y</SB>N (0≤y≤0.5) is provided in contact with that substrate 1, and nitride semiconductor layers 3-7 are laid in layers on the first nitride semiconductor layer 2 to form a semiconductor element. <P>COPYRIGHT: (C)2007,JPO&INPIT |
