| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element wherein operation voltage is lowered, current dispersion effect is improved and phenomenon in which current leaks by reflecting material like silver can be restrained to the minimum; and to provide its manufacturing method. <P>SOLUTION: The nitride semiconductor light emitting element and its manufacturing method are provided. The nitride semiconductor light emitting element is equipped with an n-type electrode, an n-type nitride semiconductor layer 120 which is formed so as to be in contact with the n-type electrode, an active layer 130 formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer 140 formed on the active layer, an undope GaN layer 210 formed on the p-type nitride semiconductor layer, an AlGaN layer 220 which is formed on the undope GaN layer and provides a two dimensional electron gas layer on a bonding interface with the undope GaN layer, a reflective layer 150 formed on the AlGaN layer, a barrier layer 300 formed in a profile which encloses the reflective layer, and a p-type electrode 170 formed on the barrier layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
