| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for production of a silicon single crystal free from fine defects that are grown-in defects whose source is formed when growing the single crystal and which are actualized in the production process of a device to greatly affect the device, and by which oxygen precipitates (BMD) are uniformly generated on the surface of a wafer and the high and low levels of a BMD formation amount can selectively be obtained, and also to provide a silicon wafer produced from the above single crystal. SOLUTION: In the method of growing the silicon single crystal by the CZ (Czochralski) method, the hydrogen partial pressure in an inert atmosphere in a growing apparatus is regulated to be≥40 Pa but≤400 Pa, and the trunk part of the single crystal is grown as a defect-free area free from the grown-in defects. The large amount of BMD is obtained by controlling the hydrogen partial pressure to be≥40 Pa but≤160 Pa, and for the less amount of BMD to be >160 Pa but≤400 Pa. Further, the oxygen concentration in a melt is also controlled. COPYRIGHT: (C)2007,JPO&INPIT
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