DEPOSITION TOOL CLEANING PROCESS HAVING A MOVING PLASMA ZONE

摘要

The present invention provides, in one embodiment, a process for cleaning a deposition chamber ( 100 ). The process includes a step ( 100 ) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process ( 100 ) further includes a step ( 120 ) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process ( 100 ) into a system ( 200 ) for cleaning a deposition chamber ( 205 ) and a method of manufacturing semiconductor devices ( 300 ).