| 发明名称 |
Semiconductor device and method of fabricating the same |
| 摘要 |
A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X½)<=X2<=(3*X¼) and (X½)<=X3<=(3*X¼).
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| 申请公布号 |
US2006258045(A1) |
申请公布日期 |
2006.11.16 |
| 申请号 |
US20060412127 |
申请日期 |
2006.04.27 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
ISHIGURI MASAHIKO;MATSUKI HIROHISA;YODA HIROYUKI;OKAMOTO TADAHIRO;IKUMO MASAMITSU;CHIBA SHUICHI |
| 分类号 |
H01L21/00;H01L21/60;H01L21/28;H01L21/768;H01L23/02;H01L23/48;H01L23/485;H01L23/52 |
主分类号 |
H01L21/00 |
| 代理机构 |
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