| 发明名称 |
Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction |
| 摘要 |
A semiconductor structure is formed as follows. A semiconductor region is formed to have a P-type region and a N-type region forming a PN junction therebetween. A first trench is formed extending in the semiconductor region adjacent at least one of the P-type and N-type regions is formed. At least one diode is formed in the trench.
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| 申请公布号 |
US2006258081(A1) |
申请公布日期 |
2006.11.16 |
| 申请号 |
US20060487015 |
申请日期 |
2006.07.14 |
| 申请人 |
KOCON CHRISTOPHER B;YEDINAK JOSEPH A |
发明人 |
KOCON CHRISTOPHER B.;YEDINAK JOSEPH A. |
| 分类号 |
H01L21/8234;H01L29/06;H01L29/40;H01L29/78;H01L29/861 |
主分类号 |
H01L21/8234 |
| 代理机构 |
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