Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure

摘要

The invention relates to a semiconductor structure for controlling a current (I), comprising a first n-conductive semiconductor region ( 2 ), a current path that runs within the first semiconductor region ( 2 ) and a channel region ( 22 ). The channel region ( 22 ) forms part of the first semiconductor region ( 2 ) and comprises a base doping. The current (I) in the channel region ( 22 ) can be influenced by means of at least one depletion zone ( 23, 24 ). The channel region ( 22 ) contains an n-conductive channel region ( 225 ) for conducting the current, said latter region having a higher level of doping than the base doping. The conductive channel region ( 225 ) is produced by ionic implantation in an epitaxial layer ( 262 ) that surrounds the channel region ( 22 ).