FABRICATION METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

A method for manufacturing a semiconductor IC device is provided to improve the productivity by removing a silicide blocking layer using a wet etching process. A first silicide blocking layer(172) is formed on a semiconductor substrate. A second silicide blocking layer(174) is formed on the first silicide blocking layer in a predetermined temperature range of 500 ‹C or less. A wet etching process is performed on the resultant structure by using a photoresist pattern as an etch mask to remove the second silicide blocking layer therefrom. The photoresist pattern is removed from the resultant structure by using a wet strip process without ashing. A cleaning process is performed on the resultant structure to remove selectively the first silicide blocking layer. A silicidation is then performed on the entire surface of the resultant structure.