发明名称 METHOD FOR PREPARING A HIGH RESOLUTION PATTERN WITH DIRECT WRITING MEANS
摘要 A method for forming a high resolution pattern is provided to reduce remarkably fabrication costs and to simplify manufacturing processes by using a direct patterning manner. A sacrificial layer(30) made of a first material is formed on a substrate(10). A pattern groove is formed on the resultant structure by performing a direct patterning process on the sacrificial layer. The pattern groove has a CD(Critical Dimension) with a first resolution. A second material is filled in the pattern groove in a second resolution range. Then, the remaining sacrificial layer is eliminated from the resultant structure.
申请公布号 KR20060117169(A) 申请公布日期 2006.11.16
申请号 KR20050129694 申请日期 2005.12.26
申请人 LG CHEM. LTD. 发明人 SHIN, DONG YOUN
分类号 H01L21/32 主分类号 H01L21/32
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