METHOD OF FORMING METAL INTERCONNECT FOR SEMICONDUCTOR DEVICE BASED ON SELECTIVE DAMASCENE PROCESS

摘要

Provided is a method for forming metal interconnect only in desired regions of a semiconductor device based on selective damascene using an insulation material against plating to form the metal interconnect without a Chemical Mechanical Polishing (CMP) or an additional lithography process. The selective damascene is stable and effective in the respect of cost and simplifies the semiconductor interconnect forming process.