METHOD OF PRODUCING NITRIDE SEMICONDUCTOR ELEMENT

摘要

A method of producing a nitride semiconductor element having a (low-resistance) p-type nitride semiconductor layer high in carrier concentration by activating an acceptor without posing a problem of forming nitrogen vacancies that will occur when a high-temperature annealing is carried out over an extended time. A semiconductor laminate (6) consisting of a nitride semiconductor is formed on a substrate (1), and a laser beam having a wavelength ? is applied from the front surface side of the semiconductor laminate; ?=h·c/E or smaller (E is energy capable of separating off the bonding between Mg and H). Then, heat treating is carried out at 300-400æC. And, a translucent conductive layer (7) is provided similarly to a normal nitride semiconductor LED producing step, and part of the semiconductor laminate is removed by etching to form an n-side electrode (9) on an exposed n-type layer (3) and a p-side electrode (8) on the surface of the translucent conductive layer.