| 摘要 |
A method for fabricating a CMOS image sensor is provided to prevent adjacent micro lens from overlapping each other by forming a hemi-spherical micro lens by a reflow process after a photoresist pattern is hardened. Photoresist is deposited on an underlying layer having a photodiode(31), various kinds of transistors and a color filter. The photoresist is selectively patterned to form a plurality of photoresist patterns(36a). The surface of each photoresist pattern is hardened by a plasma treatment. The hardened photoresist pattern is reflowed to form a micro lens. In the plasma treatment, CF-based gas including fluorine elements and CHF-based gas are used as polymer formation gas.
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