发明名称 |
Semiconductor memory device and method of manufacturing the same |
摘要 |
A method of manufacturing a semiconductor memory device is provided. The method includes: providing a semiconductor substrate, forming a cell transistor on the semiconductor substrate, and forming a SiON layer with a refractive index of about 1.8 or less on the cell transistor.
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申请公布号 |
US2006258099(A1) |
申请公布日期 |
2006.11.16 |
申请号 |
US20060432118 |
申请日期 |
2006.05.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE EUHN-GI;JANG BONG-JUN;YUN SUNG-WOON |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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