发明名称 Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same
摘要 A catalyst-enhanced chemical vapor deposition (CECVD) apparatus and a deposition method, in which tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated. The CECVD apparatus may be constructed with a process chamber, a showerhead to introduce process gas into process chamber, a tensile catalyst wire structure provided in the process chamber to decompose the gas introduced from the showerhead, and a substrate on which the gas decomposed by the catalyst wire structure is deposited, so that the tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated, thereby eliminating occurrences of non-uniform temperatures of a substrate and non-uniform film growth, and concomitantly enhancing the durability of the catalyst wire.
申请公布号 US2006254513(A1) 申请公布日期 2006.11.16
申请号 US20060405552 申请日期 2006.04.18
申请人 KANG HEE-CHEOL;FURUNO KAZUO;KIM HAN-KI;KIM MYOUNG-SOO 发明人 KANG HEE-CHEOL;FURUNO KAZUO;KIM HAN-KI;KIM MYOUNG-SOO
分类号 C23C16/00 主分类号 C23C16/00
代理机构 代理人
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