发明名称 METHOD FOR DETECTING A DEFECT OF WAFER
摘要 A wafer defect detecting method is provided to improve the reliability of a wafer defect detecting process by using two-step defect detecting processes. A first defect detecting process is performed on a plurality of wafers(S100). At this time, wafer defects are mechanically detected. A second defect detecting process is performed on defective wafers in order to check the kind and the degree of defect. The second defect detecting process is composed of first to third steps. The wafer defects are sorted by using a first predetermined reference in the first step(S200). The degree of defect is quantified in the second step(S300). The quantified defect is compared with a second predetermined reference(S400).
申请公布号 KR20060117032(A) 申请公布日期 2006.11.16
申请号 KR20050039737 申请日期 2005.05.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEONG, SIL KEUN
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
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