REPAIR CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE

摘要

A repair circuit of a semiconductor memory device is provided to increase program judging period and to increase program judging margin for an anti-fuse device, by detecting the programmed state of the anti-fuse device in response to a delayed power up reset signal. A program part(120) programs an anti-fuse device(110) by changing conduction resistance of the anti-fuse device. A delay part(200) delays a power up reset signal in response to a control signal. A detection part(130) detects whether the anti-fuse device is programmed, in response to the delayed power up reset signal. And a first latch part(140) transfers the detected programmed state to a redundancy circuit part.