发明名称 Memory cell, memory using the memory cell, memory cell manuracturing method, and memory recording/reading method
摘要 A memory cell having a configuration completely different from that of a memory cell of a conventional memory and having various excellent characteristics, and also a method for manufacturing the same, are provided. A memory having various excellent characteristics is provided as well by use of the memory cell. Furthermore, a method for recording/reading information in/from the memory is provided. The memory cell includes a memory medium for holding information, a controlling part for recording information in the memory medium, and a detecting element for reading information from the memory medium, where the detecting element is provided independently of the memory medium. More specifically, for example, the memory medium is a magnetic device, the controlling part includes a first magnetic field generating part for applying a magnetic field to the magnetic device so as to change a magnetization state of the magnetic device, and the detecting element is arranged in the vicinity of the magnetic device and has a magnetoelectric converting part whose electric characteristics vary in accordance with the magnetization state of the magnetic device.
申请公布号 US2006256609(A1) 申请公布日期 2006.11.16
申请号 US20060551500 申请日期 2006.07.24
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 MURAKAMI MOTOYOSHI;GOTOH YASUHIRO
分类号 G11C11/00;G11C11/14;H01L21/8246;H01L27/105;H01L27/22 主分类号 G11C11/00
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