NITRIDE SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD THEREFOR

摘要

A nitride semiconductor element having a structure of improving the crystallinity of a growing nitride semiconductor and capable of very easy peeling off and chip-forming of a substrate, and a production method therefor. When a nitride semiconductor element in which nitride semiconductor layers are laid on a substrate (1) is formed, the substrate consists of Mg<SUB>x</SUB>Zn<SUB>1-x</SUB>O (0<x=0.5), a first nitride semiconductor layer (2) consisting of In<SUB>y</SUB>Ga<SUB>1-y</SUB>N (0=y=0.5) is provided in contact with the substrate, and nitride semiconductor layers (3)-(7) are placed on the first nitride semiconductor layer so as to form the semiconductor element.