| 摘要 |
A CMOS image sensor is provided to improve an operation characteristic of an image sensor by optimizing the thickness and the bottom diameter of the image sensor. A plurality of photodiodes and various kinds of transistors are formed in a semiconductor substrate(200) at regular intervals. An interlayer dielectric is formed on the semiconductor substrate. A silicon nitride layer is formed on the interlayer dielectric. A plurality of color filter layers(212) are formed on the silicon nitride layer, corresponding to each photodiode. A planarization layer(213) is formed on the resultant structure. A micro lens(214) is formed on the planarization layer, corresponding to each color filter layer and having a bottom diameter of 2.5~3.0 micrometers and a thickness of 0.38~0.52 micrometer.
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