| 摘要 |
A method for fabricating a CMOS image sensor is provided to increase optical efficiency by reducing a path of light incident upon a photodiode through a micro lens while simultaneously opening a pad region and a photodiode region by a pad opening mask for removing an insulation layer in the photodiode region so that a fabricating process is simplified. A semiconductor substrate is defined as a photodiode region and a pad region, and a photodiode(111) is formed in the photodiode region of the substrate. A first interlayer dielectric(200) and an insulation layer are sequentially formed on the resultant structure. A metal pad(202) is formed on the insulation layer in the pad region. A second interlayer dielectric(203) is formed on the resultant structure. A mask layer is formed on the second interlayer dielectric to expose a predetermined part of the surface of the second interlayer dielectric on the metal pad and the photodiode. The second interlayer dielectric is selectively eliminated by using the mask layer as a mask so that a pad open part(205) is formed while a trench is formed on the photodiode. By using the mask layer as a mask, the second interlayer dielectric and the insulation layer under the trench are selectively removed. The mask layer is removed, and a slope is formed on the side surface of the second interlayer dielectric and the insulation layer. A micro lens(208) is formed on the first interlayer dielectric in the photodiode region.
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