发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To raise the adhesion power of resin to the side face of a first outer terminal while reducing the fear of sticking the first outer terminal to the top end face of a crushing punch during a crushing step. <P>SOLUTION: The semiconductor device manufacturing method has the steps: of connecting a first outer terminal 2 to the underside of a semiconductor element 1; connecting a second outer terminal 3 to the upside of the semiconductor element 1 through an inner terminal 4; sealing the semiconductor element 1, the inner terminal 4, a part of the first outer terminal 2 and a part of the second outer terminal 3 with resin 6; and placing the undersides of the first and second outer terminals 2, 3 and the underside of the resin 6 in the same plane. The method comprises a crushing step using a tapered crushing punch 10 for forming a first and second slopes 2c1, 2c2 making a first and second obtuse anglesθ1,θ2 to the underside 2b of the first outer terminal 2 on side faces 2c, 2d of the first outer terminal 2, respectively, so that at least a part of the first and second slopes 2c1, 2c2 and the boundary parts thereof are contained in the resin 6. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006313830(A) 申请公布日期 2006.11.16
申请号 JP20050135993 申请日期 2005.05.09
申请人 NIPPON INTER ELECTRONICS CORP 发明人 SUGIMOTO NORIKATSU;ONISHI TAKAAKI;KAMINAO TAKESHI
分类号 H01L23/48;H01L23/28 主分类号 H01L23/48
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