| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a high reliability semiconductor device. SOLUTION: The method comprises a step of forming trenches 26 in a first surface 24 of a semiconductor substrate 2 having a plurality of integrated circuit elements 10 without overlapping with the plurality of integrated circuit elements 10, pasting a holder 32 onto the first surface 24 of the substrate 2, and cutting the semiconductor substrate 2 by a blade 30 so that the blade 30 pierces trenches 26 from a second surface 38 opposite to the first surface 24 but not reaches the first surface 24 without touching the holder 32. COPYRIGHT: (C)2007,JPO&INPIT |
