| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase transformation memory element by which power consumption required for the phase transformation of a phase transformation film is minimized by minimizing a contact area of a current impression part brought into contact with the phase transformation film. <P>SOLUTION: A phase transformation memory element comprises a lower structure having a contact plug 27, a nanowire 28 formed by extending from the surface of the contact plug 27 to the inside of the contact plug 27, and the phase transformation film 29 formed on the contact plug 27. <P>COPYRIGHT: (C)2007,JPO&INPIT |
