| 摘要 |
A semiconductor device, includes a semiconductor substrate; a first insulating layer formed on the semiconductor substrate; a first electrode formed on the first insulating layer; an interlayer dielectric formed over the first electrode; a wiring layer formed over the interlayer dielectric; a first contact hole formed through the interlayer dielectric between the first electrode and the wiring layer; and a barrier metal layer formed on an inner surface of the first contact hole. The first contact hole is formed to pass through the first electrode and reach an inside of the first insulating layer.
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