LIGHT-EMITTING DIODE, METHOD FOR MAKING LIGHT-EMITTING DIODE, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MAKING INTEGRATED LIGHT-EMITTING DIODE, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, AND LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC DEVICE

摘要

A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.