| 摘要 |
A half-tone type of phase shift blank mask for photo-mask used in lithographic process is provided to show excellent selectivity of a transparent substrate to a phase sift film in wet and dry etching processes, and offer superior chemical- and light-resistance by laminating the phase shift film, etching prevention film, light shielding film and resist film in order on the substrate. The phase shift blank mask(300) includes; a silicon containing thin film(70) formed between an anti-reflective film(60) and a resist film(80) by surface-treating the anti-reflective film with organic material containing silicon; and an etching prevention film(40) which includes wet etching solution, or metal or metal compound to be etched by dry etching gas. The wet etching solution is applied to at least one selected from a phase shift film, a light shielding film(50) and the anti-reflective film. The phase shift film comprises first and second phase shift films(20,30) which are formed with different compounds originated from the same metal.
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