发明名称 METHOD FOR CONTROLLING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To enhance reliability by stabilizing gate voltage, even at high voltage, high current, preventing current nonuniformity and oscillation, and the like, thereby protecting the device against breakdowns. <P>SOLUTION: In the method for controlling the semiconductor device, having two main electrodes and a control electrode part which controls current between the main electrodes, in a detection process, an amount of charge accumulated at the control electrode part is detected, based on voltage of the control electrode part. In a control process, voltage applied to the control electrode part and/or current flow to the control electrode part is controlled, based on the amount of charge detected by the detecting process. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006314112(A) 申请公布日期 2006.11.16
申请号 JP20060141951 申请日期 2006.05.22
申请人 TOSHIBA CORP 发明人 OMURA ICHIRO;WOLFGANG FIKTONNER;NINOMIYA HIDEAKI;OHASHI HIROMICHI;OGURA TSUNEO
分类号 H03K17/08;H01L21/822;H01L21/8234;H01L27/04;H01L27/088;H01L29/739;H01L29/78;H02M1/08;H03K17/56 主分类号 H03K17/08
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