| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of preventing a failure caused by deterioration of etching accuracy in a region at a memory cell array end. <P>SOLUTION: The semiconductor memory device includes first blocks 2-0, 2-N composed of first memory cell units to which a plurality of memory cells M<SB>1</SB>to M<SB>8</SB>are connected, and second blocks 2-1 to 2-(N-1) composed of second memory cell units to which a plurality of memory cells M<SB>1</SB>to M<SB>8</SB>are connected. A memory cell array 2 is constituted by disposing the first block at opposite ends and the second block at other portions. Constitution of the first memory cell unit on the side of the memory cell array end is different from that of the second memory cell unit. It is possible to prevent a failure caused by deterioration of etching accuracy of the region at the memory cell array end, and to realize high yield operation and high reliability operation substantially without causing an increase of a chip size. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
