发明名称 |
Vertical diode, matrix position sensitive apparatus and manufacturing method of the same |
摘要 |
A vertical diode formed by stacking semiconductor layers includes (1) a lower electrode whose surface is plasma-treated in a gas containing an element which becomes a P-type or N-type conductivity type, and (2) a non-doped semiconductor layer provided on the lower electrode. The P-type or N-type semiconductor area is formed in a contact surface of the non-doped semiconductor layer in contact with the plasma-treated surface of the lower electrode.
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申请公布号 |
US2006258080(A1) |
申请公布日期 |
2006.11.16 |
申请号 |
US20060430896 |
申请日期 |
2006.05.10 |
申请人 |
NEC LCD TECHNOLOGIES, LTD. |
发明人 |
TAKAHASHI MITSUASA |
分类号 |
H01L21/8238;H01L23/58 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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