Fully-depleted SOI MOSFET device and process for fabricating the same

摘要

The present invention proposes a nano-scale high-performance SOI MOSFET device and a process for manufacturing the same. The device is characterized by comprising: a metal oxide semiconductor, formed on the SOI substrate; a silicide layer ( 05 ), wherein a gate consists of a single full silicide gate ( 10 ), a high-K dielectric layer ( 08 ) and a part for work function modification ( 09 ); and source/drain ( 6 ) are complete through a silicide reaction and has a modified Schottky junction.