发明名称 Multi-layered copper line structure of semiconductor device and method for forming the same
摘要 A multi-layered copper line structure of a semiconductor device with a lower copper line, an upper copper line, and a via contact, which electrically connects the lower copper line and the upper copper line, can incorporate one or more dummy via contacts to reduce the occurrence of voids in the via contacts. The one or more dummy via contacts can be formed adjacent the via contact and non-electrically connected to the lower copper line.
申请公布号 US2006258151(A1) 申请公布日期 2006.11.16
申请号 US20060433037 申请日期 2006.05.12
申请人 YOUNG LEE T 发明人 YOUNG LEE T.
分类号 H01L21/4763;H01L23/48 主分类号 H01L21/4763
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